A laser-activated avalanche transistor compatible with planar processing has been devised. The I-V characteristics display current-controlled negative differential resistance similar to a bidirectional triggering diode. Capability as an edge detector or as a comb generator was demonstrated. An avalanche current gain of 24 carriers/photon with a 20-V bias was observed when the transistor was used as an optical pulse detector.
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Chen et al. (1981) studied this question.
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