The device parameters of short-gate GaAs and InP FETs have been found to be dependent on the non-equilibrium velocity overshoot phenomena. Both n sat and E s are found to be larger for shorter gates. The v-E characteristics of Pucel et at. are modified. ƒT and other parameters for GaAs, InP and Si arc given as a function of gate length and bias. The ƒT of InP MESFETs with doping density of 1017 cm-13 is only 20% higher than those of equivalent GaAs MESFETs at 300 K. Comparison with other work is also presented.
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Wang et al. (1979) studied this question.
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