Misfit dislocations generated in (110), (112), and (113) silicon p-on-p+ epitaxial wafers are investigated through x-ray topography. Dislocations observed are of mixed type and arranged along the intersection of the four {111} planes with the specimen surface. The dislocations are formed by slip to relieve the interfacial shear resulting from the misfit.
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Tamura et al. (1973) studied this question.
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