Electrical Properties of Sn‐Doped α‐Ga₂O₃ Films on m‐Plane Sapphire Substrates Grown by Mist Chemical Vapor Deposition

Growth and electrical property of conductive Sn‐doped α‐Ga 2 O 3 films on m‐plane sapphire by mist chemical vapor deposition (mist‐CVD) are exhibited. Although the crystallinity is still inferior in comparison with previously reported α‐Ga 2 O 3 films on c‐plane sapphire, highly crystalline α‐Ga 2 O 3 films on m‐plane sapphire substrates are grown by applying two‐step growth procedure. Carrier concentration of Sn‐doped α‐Ga 2 O 3 films is controlled in the range of 10 17 –10 19 cm −3 by changing the Sn/Ga concentration ratio in source solution. α‐Ga 2 O 3 films on m‐plane sapphires with the thickness of 2 μm show mobilities as high as 65 cm 2 (V s) −1 , which is much higher than previously reported value of 24 cm 2 (V s) −1 in the films grown on c‐plane sapphire.