Electronic effects on dislocation velocities in heavily doped germanium

Based on a model proposed by Frisch and Patel, the dislocation velocity behavior in heavily doped germanium has been analyzed using Fermi-Dirac statistics. Both the isothermal doping dependence and the temperature dependence of the change in dislocation velocity with doping can be accounted for by assuming an acceptorlike dislocation energy level, somewhat above the center of the energy gap.