The use of realistic band structure in impact ionization calculations for wide bandgap semiconductors: thresholds, anti-thresholds and rates in GaAs and AlGaAs

We report a comprehensive description of direction-dependent impact ionization threshold/anti-threshold calculations in GaAs and Al 0.3 Ga 0.7 As using a realistic pseudopotential band structure model. Both electron- and hole-initiated processes are studied. In the case of GaAs rate calculations are presented for some electron- and hole-initiated processes, while for Al 0.3 Ga 0.7 As results of rate calculations for some electron-initiated processes are given.