We have studied the formation of octadecyltrichlorosilane (OTS) monolayers on Si(111) surfaces, using X-ray reflectivity at the solution−substrate interface. We find that the thickness of the OTS layer remains at ∼25 Å throughout the entire growth process. The electron density of the deposited layer increases monotonically, from very close to that of the solution to that of a densely packed OTS monolayer. We do not observe any increased roughness at the OTS−solution interface of a partially deposited monolayer. This means that the molecules are vertical when deposited and that the films undergo “island-type” growth.
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Richter et al. (1998) studied this question.
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