We investigated intentionally hydrogenated zinc oxide (ZnO:H) fabricated by combining photoassisted metalorganic chemical vapor deposition and mercury-sensitized hydrogen addition methods. We found that intentionally incorporated hydrogen plays an important role in n-type conduction as a donor, improving free carrier concentration and electrical stability. We simultaneously obtained improved surface roughness of the ZnO:H film due to an enhancement of (112̄0) orientation. The high-quality ZnO:H film is promising as a back reflector material for thin-film solar cells.
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Myong et al. (2003) studied this question.
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