Thick ZnO film growth on a sapphire (0001) surface has been examined by means of atmospheric pressure halide vapor-phase epitaxy (AP-HVPE), aiming at homoepitaxial growth of the light-emitting layers of a laser and light-emitting diodes to improve their quality. It was found that the AP-HVPE method is very useful for thick-layer ZnO growth because the observed growth rate reached 100 μm/h. The surface of ZnO deposited onto a sapphire substrate at 1023 K was smooth and free from cracks. The photoluminescence spectra showed a strong ultraviolet emission centered at 381.0 nm at room temperature.
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Takahashi et al. (2002) studied this question.
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