Topological Insulator Thin Films of Bi₂Te₃ with Controlled Electronic Structure

Topological insulator thin films of Bi2Te3 with controlled electronic structure can be grown by regulating the molecular beam epitaxy (MBE) growth kinetics without any extrinsic doping. N- to p-type conversion results from the change in the concentrations of TeBi donors and BiTe acceptors. This represents a step toward controlling topological surface states, with potential applications in devices.