We present a new type of quantum well infrared photodetector. The structure is not doped and the electrons necessary for the photodetection are optically injected by interband absorption. The functioning of the photodetector is then completely controlled by the near-infrared pump beam. We have used coupled quantum wells in order to increase the lifetime of the carriers and hence increase the photoinduced electron density. The behavior of the device versus infrared wavelength, pump wavelength, and applied bias is studied.
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Berger et al. (1993) studied this question.
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