Experimental bias stability data for LiNbO/sub 3/ electrooptic modulators spanning intervals from seconds to hundreds of days are analyzed. We find that the unique features of the data may be described through refinements of previous resistor capacitor network models. Network element values deduced from the experimental data provide compelling evidence that the interfaces between constituent materials play a significant role in the long term behavior of devices. The success of the model suggests it may be a valuable tool in the development of devices having low bias drift rates and in establishing test and reliability criteria.
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Korotky et al. (1996) studied this question.
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