Low loss is demonstrated at infrared wavelengths in channel guides formed by electron beam irradiation of SiO2 layers on Si substrates. By comparing materials from different PECVD processes, it is shown that substrate losses may largely be eliminated by using a suitable SiO2 thickness, and that extrinsic absorption caused by hydrogen contamination may be reduced by annealing before irradiation. The effectiveness of annealing depends strongly on the original material composition.
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Syms et al. (1994) studied this question.
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