GaAs has been converted to Ga1−xAlxAs by implanting GaAs substrates with 30-KeV Al+ ions and subsequently annealing at 900 °C. The maximum ion dose used was 2×1016/cm2, corresponding to a calculated peak concentration of approximately 1022 Al atoms/cm3. The emission spectra of electroluminescent diodes formed in the material were measured.
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Hunsperger et al. (1971) studied this question.
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