An epitaxially integrated 1.5 to 1 µm up-conversion device is reported. The device consists of a serially connected In0.53Ga0.47As photodiode and InAs0.1P0.9 light emitting diode, grown on InP. The device operation relies first on detecting a 1.5 µm signal by the photodiode and secondly on driving the emitter by the resulting photocurrent, thus achieving the up-conversion.
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Liu et al. (2000) studied this question.
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