We introduce a novel, high-throughput processing method to produce high-efficiency solar cells via a backside rounding process and ion implantation. Ion implantation combined with a backside rounding process is investigated. The ion implantation process substituted for thermal POCl3 diffusion performs better <svg style="vertical-align:-3.39069pt;width:36.125px;" id="M1" height="15.4" version="1.1" viewBox="0 0 36.125 15.4" width="36.125" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path id="x1D445" d="M627 18l-10 -26q-79 6 -116 27t-69 76q-41 71 -71 138q-13 29 -27.5 39t-42.5 10h-46l-27 -145q-13 -74 -2.5 -88.5t78.5 -20.5l-6 -28h-271l5 28q66 6 82.5 21.5t30.5 87.5l71 387q12 66 2 78.5t-77 19.5l8 28h233q102 0 147 -29q65 -43 65 -129q0 -69 -45.5 -117 t-115.5 -72q40 -86 66 -133q39 -68 65 -101q28 -37 73 -51zM491 483q0 67 -33.5 101t-91.5 34q-35 0 -51 -10q-13 -8 -20 -48l-45 -245h49q71 0 113 28q79 52 79 140z" /></g> <g transform="matrix(.012,-0,0,-.012,11.013,15.187)"><path id="x73" d="M319 325l-25 -7q-33 99 -103 99q-29 0 -47 -19.5t-18 -49.5t22 -49.5t62 -36.5q63 -26 95 -57t32 -79q0 -64 -50 -101t-115 -37q-35 0 -67.5 10.5t-46.5 23.5q-5 11 -11 51t-6 67l27 5q14 -53 46.5 -88.5t75.5 -35.5q29 0 50 19.5t21 50.5t-19.5 51.5t-59.5 39.5 q-28 12 -46 22.5t-38.5 27t-30.5 38.5t-10 49q0 54 42.5 92t109.5 38q48 0 88 -18q6 -15 13 -50.5t9 -55.5z" /></g><g transform="matrix(.012,-0,0,-.012,15.332,15.187)"><path id="x68" d="M513 0h-211v26q44 5 55 17t11 60v166q0 123 -98 123q-59 0 -104 -51v-238q0 -48 10 -60.5t55 -16.5v-26h-213l1 26q46 4 57 16t11 61v477q0 48 -9.5 58.5t-58.5 14.5v24q63 9 147 35v-336q73 73 143 73q64 0 101 -42t37 -129v-175q0 -49 11 -61t55 -16v-26z" /></g><g transform="matrix(.012,-0,0,-.012,21.638,15.187)"><path id="x65" d="M380 106l15 -22q-42 -52 -87 -74t-76 -22q-89 0 -142 62t-53 151q0 103 66 175q67 73 146 73h1q61 0 105.5 -46.5t44.5 -105.5q0 -16 -4.5 -22.5t-18.5 -9.5q-54 -10 -262 -17q1 -95 46 -143.5t104 -48.5q61 0 115 50zM225 412q-35 0 -64.5 -32.5t-40.5 -90.5q83 0 170 3 q14 0 19 4.5t5 15.5q1 41 -23.5 70.5t-65.5 29.5z" /></g><g transform="matrix(.012,-0,0,-.012,26.743,15.187)"><use xlink:href="#x65"/></g><g transform="matrix(.012,-0,0,-.012,31.8,15.187)"><path id="x74" d="M298 36l-68 -35q-25 -13 -42 -13q-98 0 -98 119v290h-69l-4 11l28 29h45v72l65 67l14 -2v-137h113q8 -8 6 -21t-12 -19h-107v-256q0 -96 59 -96q29 0 61 17z" /></g> </svg> uniformity (<3%). The U-4100 spectrophotometer shows that wafers with backside rounding process perform higher reflectivity at long wavelengths. Industrial screen printed (SP) Al-BSF on different etching depth groups was analyzed. SEMs show that increasing etch depth improves back surface field (BSF). The <svg style="vertical-align:-0.0pt;width:7.5500002px;" id="M2" height="11.175" version="1.1" viewBox="0 0 7.5500002 11.175" width="7.5500002" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(.017,-0,0,-.017,.062,11.113)"><path id="x1D43C" d="M414 650l-6 -28q-63 -4 -78.5 -17.5t-27.5 -71.5l-77 -416q-11 -58 0.5 -71.5t77.5 -17.5l-5 -28h-275l8 28q63 4 79.5 18.5t27.5 70.5l80 416q11 57 -2 71t-81 18l6 28h273z" /></g> </svg>-<svg style="vertical-align:-0.1638pt;width:12.7375px;" id="M3" height="11.375" version="1.1" viewBox="0 0 12.7375 11.375" width="12.7375" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path id="x1D449" d="M730 650l-8 -28q-52 -4 -72 -18t-64 -77q-79 -113 -321 -539h-33l-119 541q-13 59 -29.5 73t-66.5 20l7 28h245l-8 -28l-28 -5q-33 -6 -40.5 -15.5t-0.5 -38.5l102 -450h2q191 320 246 430q21 42 15.5 56t-43.5 19l-31 4l7 28h240z" /></g> </svg> measurement revealed that etching depths of 6 μm ± 0.1 μm due to having the highest <svg style="vertical-align:-3.41936pt;width:30.375px;" id="M4" height="15.4375" version="1.1" viewBox="0 0 30.375 15.4375" width="30.375" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(.017,-0,0,-.017,.062,11.112)"><use xlink:href="#x1D449"/></g> <g transform="matrix(.012,-0,0,-.012,12.675,15.187)"><path id="x4F" d="M381 665q131 0 226.5 -93t95.5 -239q0 -158 -96 -253t-238 -95q-137 0 -231 95t-94 238q0 142 92.5 244.5t244.5 102.5zM359 629q-89 0 -151 -74.5t-62 -208.5q0 -141 69 -233t175 -92q90 0 150.5 74t60.5 211q0 152 -69 237.5t-173 85.5z" /></g><g transform="matrix(.012,-0,0,-.012,21.778,15.187)"><path id="x43" d="M614 175l29 -10q-33 -109 -57 -154q-121 -26 -184 -26q-90 0 -160.5 29t-112.5 77t-63.5 105.5t-21.5 119.5q0 157 108 253t277 96q36 0 71.5 -5t69 -13.5t36.5 -8.5q15 -102 20 -150l-29 -8q-20 79 -66.5 114t-128.5 35q-119 0 -187.5 -86t-68.5 -207 q0 -140 73.5 -227.5t188.5 -87.5q73 0 119.5 37.5t86.5 116.5z" /></g> </svg> and <svg style="vertical-align:-3.41936pt;width:21.725px;" id="M5" height="15.4375" version="1.1" viewBox="0 0 21.725 15.4375" width="21.725" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg"> <g transform="matrix(.017,-0,0,-.017,.062,11.112)"><use xlink:href="#x1D43C"/></g> <g transform="matrix(.012,-0,0,-.012,7.487,15.187)"><path id="x53" d="M409 504l-29 -5q-16 60 -44.5 96t-86.5 36q-54 0 -82.5 -32t-28.5 -77q0 -51 30.5 -82.5t96.5 -65.5l35.5 -18t33 -19.5t33.5 -23.5l27 -25.5t24.5 -32t13.5 -36.5t6 -45q0 -80 -62 -134.5t-160 -54.5q-47 0 -98 15q-22 7 -50 21q-8 23 -27 155l30 7q7 -27 18 -52 t30 -51.5t49 -42.5t67 -16q56 0 88 32.5t32 87.5q0 51 -31.5 82t-98.5 67q-80 44 -110 73q-55 53 -55 124q0 75 56 126.5t150 51.5q53 0 126 -23z" /></g><g transform="matrix(.012,-0,0,-.012,13.128,15.187)"><use xlink:href="#x43"/></g> </svg>, it has the best performance. SEMs also show that higher etching depths also produce uniform Al melting and better BSF. This is in agreement with IQE response data at long wavelengths.
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Lee et al. (2012) studied this question.
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