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January 1, 2020IEEE Journal of the Electron Devices SocietyOpen Access

Impact of Source to Drain Tunneling on the Ballistic Performance of Si, Ge, GaSb, and GeSn Nanowire p-MOSFETs

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DYDibakar YadavDNDeleep R. NairIndian Institute of Technology Madras

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Yadav et al. (2020) studied this question.

synapsesocial.com/papers/6a6f6667febe604dd7085352https://doi.org/10.1109/jeds.2020.2980633
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