For a variety of solar cells, it is shown that the single exponentialJ-Vmodel parameters, namely - ideality factor eta, parasitic series resistanceRs, parasitic shunt resistanceRsh, dark currentJ0, and photogenerated currentJphcan be extracted simultaneously from just four simple measurements of the bias points corresponding toVoc, ~ 0.6Voc,Jsc, and ~ 0.6Jscon the illuminatedJ-Vcurve, using closed-form expressions. The extraction method avoids the measurements of the peak power point and any dJ/dV (i.e., slope). The method is based on the power lawJ-Vmodel proposed recently by us.
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Saleem et al. (2009) studied this question.
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