Fabrication of a GaAs quantum-well-wire structure by Ga focused-ion-beam implantation and its optical properties

A quantum-well wire was fabricated with use of local intermixing of a GaAs-Alₓ{Ga}_{1{{-}}x}$As single-quantum-well epitaxial layer induced by Ga focused-ion-beam implantation. Fine structures were observed in low temperature photoluminescence and photoluminescence excitation spectra. These fine structures are explained by the density of states specific to the two-dimensionally confined carrier system.