Anisotropic magnetic response of a chiral conducting film

We use tilted magnetic fields to study the magnetoresistance of the chiral sheath of edge states that transports charge through GaAs/AlGaAs multilayers in the integer quantum Hall regime. The magnetic field component perpendicular to the layer planes Bz establishes the quantum Hall state, while the in-plane field Bₚₗₐₙₑ is either perpendicular or parallel to the edge-state sheath on a given mesa wall. We find orientation-dependent response of the sheath's vertical conductivity to Bₚₗₐₙₑ, with lower conductivity for fields that link flux through the sheath.