H/Tscaling of the magnetoconductance near the conductor-insulator transition in two dimensions

For an electron density near the $H=0$ insulator-to-conductor transition, the magnetoconductivity of the low-temperature conducting phase in high-mobility silicon MOSFETs is consistent with the form Δσ(H||,T)≡σ(H||,T)-σ(0,T)=f(H||/T) for magnetic fields H|| applied parallel to the plane of the electron system. This sets a valuable constraint on theory and provides further evidence that the electron spin is central to the anomalous $H=0$ conducting phase in two dimensions.