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A multi-layer MoS2-based saturable absorber (SA) enables Q-switched operation of Yb and Tm microchip lasers. The saturation intensity of MoS2-SA is determined to be about ~0.5 MW/cm2. The Q-switched Tm laser generated 1.27 W at 1929 nm with a slope efficiency of 43% and conversion efficiency with respect to the continuous-wave mode as high as 81%. The pulse characteristics were 175 ns / 7.5 µJ corresponding to a repetition rate of 170 kHz. With the Q-switched Yb laser, 220 ns / 0.5 µJ pulses were achieved at 1030 nm. We show that using MoS2-SA at ~2 μm is advantageous as compared to multi-layer graphene. We also prove that MoS2-SA is more efficient at ~2 μm compared to ~1 μm due to a lower saturation intensity and higher fraction of the saturable loss.
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Serres et al. (2016) studied this question.
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