A fully photolithographic dual threshold voltage (VT) organic thin-film transistor (OTFT) process suitable for flexible large-area integrated circuits is presented. The nearroom-temperature (Tpentacene-based p-channel transistors. The two VT's are enabled by using two gate metals of low (aluminum) and high (platinum) work function. The Al and Pt gate OTFTs exhibit nominally identical current-voltage transfer curves shifted by an amount ΔVT. The availability of a high-VTdevice enables area-efficient zero-Vos high-output-resistance current sources, enabling high-gain inverters. We present positive noise margin inverters and rail-to-rail ring oscillators powered by a 3-V supply-one of the lowest supply voltages reported for OTFT circuits. These results show that integrating nand p-channel organic devices is not mandatory to achieve functional area-efficient low-power organic integrated circuits.
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Nausieda et al. (2010) studied this question.
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