A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer

In this letter, we demonstrate a high performance In0.53Ga0.47As channel n-type metal-oxide-semiconductor field effect transistor with silicon interface passivation layer (IPL) and HfO2 gate oxide. Owing to the effectiveness of Si IPL on improving the interface quality, good device characteristics have been obtained, including the peak transconductance of 7.7 mS/mm (Lg=5 μm and Vd=50 mV), drive current of 158 mA/mm (Lg=5 μm, Vgs=Vth+2 V, and Vd=2.5 V), and the peak effective channel mobility of 1034 cm2/V s. As an important factor on device design, the impact of silicon IPL thickness on the transistor characteristics has been investigated.