Pseudomorphic ZnSe/n-GaAs doped-channel field-effect transistors by interrupted molecular beam epitaxy

The fabrication and current-voltage characteristics of the first depletion-mode field-effect transistors based on a pseudomorphic ZnSe/n-GaAs heterointerface are described. The devices are doped-channel field-effect transistors produced by means of interrupted growth with the use of two separate molecular beam epitaxy systems. Very strong (visible to the naked eye) reflection high-energy electron diffraction intensity oscillations persist for 120 periods when ZnSe is nucleated on the GaAs epilayer. The current-voltage characteristics of the transistors are close to ideal; channel modulation indicates that the Fermi level is not pinned at the ZnSe/GaAs interface.