Epitaxial Growth of Spatially Inverted GaP for Quasi Phase Matched Nonlinear Optical Devices

We have succeeded in growing spatially inverted GaP epilayers by sublattice reversal epitaxy technique. The spatially inverted GaP epilayers can be grown reproducibly on Si interlayers deposited on GaP (100) substrates tilted toward [011]. We suggest the origin of sublattice reversal in GaP is self-annihilation of antiphase boundaries dominantly formed by Ga–Ga bonds.