A visible-light AlGaAs/GaAs DFB laser with practical characteristics oscillating at 770 nm has been fabricated by using two-step liquid phase epitaxy for the first time. Threshold current of 90 mA measured at room temperature is satisfactorily low for its simple oxide stripe structure. The same DFB mode oscillation without mode hopping has been maintained in a considerably wide range of temperature. The results show a possibility of realising a high-performance DFB laser in the visible-wavaelength region.
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Nakano et al. (1987) studied this question.
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