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An integrated injection laser-waveguide-detector device is described, fabricated from AlxGa1−xAs layers grown by liquid-phase epitaxy. Reflectors are formed by a two-step preferential etch procedure. For a laser cavity formed by one etched reflector and one cleaved mirror, an overall differential transfer efficiency of 10±1% has been measured at the detector after transmission through a 1-μm-thick passive waveguide 250 μm long. If both reflectors are etched, efficiencies as high as 2% are still observed.
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Merz et al. (1977) studied this question.
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