The electric-field domain-formation time of an undoped GaAs-AlAs superlattice embedded in a p⁺-i-n⁺ diode is investigated by time-resolved photoluminescence (PL). After optical excitation of electron-hole pairs with an ultrashort light pulse, the previously homogeneous electric field breaks up into domains that can be observed by a splitting of the PL line due to the quantum-confined Stark effect. The PL dynamics is studied as a function of excitation density and applied voltage. A domain-formation time on the order of a few nanoseconds is found. This time is unexpectedly short compared to the vertical transport time of electrons through the entire superlattice.
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Klann et al. (1995) studied this question.
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