Effects of the pn-junction on the negative differential resistance (NDR) of InGaAs/InAlAs multiple quantum well resonant tunneling diodes (MQW-RTD) are studied. It is found that in order to observe a clear NDR, a pn-junction is necessary when the electrode (cladding) layers on both sides of the MQW layer are composed of wide-band-gap InAlAs layers. This is explained by the recombination of electrons with holes near the p-InAlAs electrode layer.
No takes yet. Share an insight, caveat, or question.
Kawamura et al. (1990) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: