A clear current oscillation related to the n=3 subband levels was observed up to room-temperature in the forward I-V characteristic of the InGaAs/InAlAs MQW diodes, as well as a current oscillation related to the n=2 subband levels. A significant hysteresis characteristic was also observed for the current oscillation related to the n=3 subband levels at 77 K. The energy difference between the n=1 and n=2 subband levels estimated from the I-V characteristic agrees with that obtained from the absorption spectrum.
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Kawamura et al. (1987) studied this question.
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