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Measurements are presented of the temperature dependence of the differential quantum efficiency η d and threshold current density J th of 1.6 µm In 1- x Ga x As y P 1- y lasers. The observed sharp decrease in η d near room temperature is interpreted as due to absorption associated with transitions of electrons from the split-off valence band into holes injected into and thermally generated within the heavy hole valence band. Preliminary calculations using conventional laser theory predict a temperature variation corresponding to T 0 ≃145 K. This together with the influence of η d , appears to be sufficient to explain most of the observed temperature variation of J th .
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Adams et al. (1980) studied this question.
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