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This paper deals with transport properties at low applied electric field in a one-dimensional semiconductor superlattice. Two scattering processes are considered : deformation potential and polar optical modes. Umklapp corrections are made using a plane-wave method giving envelope wavefunctions. The collision time approximation is discussed in the present context. The method is applied to GaAs/GaAlAs superlattice systems and the mobility tensor is computed as a function of the superlattice period.
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Palmier et al. (1982) studied this question.
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