Recently, ferromagnetic tunnel junctions attracted much interest because they exhibit large magnetoresistance effects up to ΔR/R=40% at room temperature. In this paper, an alternative approach will be presented, i.e., exposing the aluminum film to ultraviolet light during oxidation. The underlying mechanism can be explained in the framework of the Cabrera–Mott theory of oxidation. With UV assisted oxidation, magnetoresistance ratios of up to 22.5% at room temperature have been obtained in Ni80Fe20–Al(ox)–Co junctions. The resistivities were in the 1 kΩ μm2 range for junctions of 25–400 μm2. Barrier heights obtained by fitting to different theories will be discussed.
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Rottländer et al. (2000) studied this question.
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