Vertical-cavity surface-emitting laser diodes fabricated by phase-locked epitaxy

We report 10 mW cw room-temperature operation of an electrically pumped vertical-cavity surface-emitting laser diode without a heat sink. This same laser produces 19 mW cw when cooled slightly below room temperature. In addition, we present a 9 mW cw laser with a threshold voltage of 1.6 V, and series resistance of 18 Ω. These are the first surface-emitting lasers fabricated by phase-locked epitaxy. They are also believed to be the highest power and lowest threshold voltage electrically pumped vertical-cavity structures reported to date. These results establish that phase-locked epitaxy has important applications in the fabrication of surface-emitting lasers and many other structures with similar materials requirements.