Modulation-doped GaAs/AlAs heterojunctions have been successfully grown for the first time. Liquid nitrogen electron mobility in excess of 100 000 cm2 V−1 s−1 has been obtained at a sheet electron concentration of 3.27×1011 cm−2. The interface properties studied by reflection electron diffraction are consistent with results of electrical measurement. The advantages of modulation-doped structures with high aluminum concentrations are discussed.
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W. I. Wang (1982) studied this question.
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