Low-loss integrated optical waveguides fabricated by nitrogen ion implantation

A technique for fabricating low-loss (on the order of 0.1 dB/cm) integrated optical waveguides in amorphous SiO2-based material by nitrogen ion implantation is reported. By comparing the results of nitrogen implantation and oxygen implantation in SiO2, the mechanism of waveguide formation in the nitrogen-implanted waveguides is shown to be chemical doping effect of the nitrogen dissolved in amorphous SiO2.