Due to the high dispersion near the band gap, normal mode locking cannot occur in usual semiconductor lasers. According to the Paoli-Ripper model the pulse properties of such lasers can be explained in terms of second-order mode locking. We present an analytical quantitative treatment of the Paoli-Ripper model and apply the results to the GaAs laser diode. A rather good agreement between theory and experiment is achieved.
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Wohrstein et al. (1973) studied this question.