Zn diffusion into AlAs/GaAs superlattices has been studied experimentally using transmission electron microscopy and secondary ion mass spectroscopy. It has been found that microdefects are present near the Zn-diffusion front. Analysis of these defects has shown them to be interstitial dislocation loops. It is believed that the diffusion of Zn into AlAs/GaAs multiquantum wells and superlattices is similar to that of Zn into GaAs. This provides evidence for the interstitial mechanism for the enhancement of the interdiffusion of the GaAs/AlAs superlattices.
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Harrison et al. (1989) studied this question.
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