High-barrier cluster-free AlxGa1−xAs-AlAs-GaAs quantum-well heterostructure laser

Laser data (77 and 300 K) are presented on an AlxGa1−xAs-AlAs-GaAs quantum-well heterostructure (QWH) grown by metalorganic-chemical vapor deposition with an active region consisting of 13 AlAs barrier layers of size LB∼10 Å and 12 GaAs quantum wells of size Lz∼50 Å. This QWH, which is free of alloy disorder and clustering (Al-Ga clusters) in the active region, emits on the confined particle transitions and not at the lower energies characteristic of QWH’s with AlxGa1−xAs barrier layers (and Al-Ga clusters).