Epitaxially grown CeO 2 (111)/Si(111) samples are heated up to 800°C in an ultra high vacuum environment, and it is verified that CeO 2 decomposes above 690°C and the CeO 2 surface becomes amorphous by means of residual gas analysis using quadrapole mass spectrometry, Rutherford backscattering in conjunction with a channeling technique, and in situ reflection high energy electron diffraction observation. The inherent difficulty of growing single crystal Si on CeO 2 is discussed.
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Yamamoto et al. (1997) studied this question.
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