The quantum theory of free carrier absorption in quasi‐two‐dimensional structures like thin films, layered heterojunctions, and inversion layers is generalized to the cases when the carriers are scattered by polar optical phonons, piezoelectric phonons, and nonpolar optical phonons. The obtained results are compared with those of the quantum theory of free‐carrier absorption in a bulk semiconductor and it is found that the absorption coefficient increases when the width of the layer or thin film decreases in all the cases.
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Giner et al. (1986) studied this question.
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