Thermal degradation of polished InP surfaces of (001) and (111) B orientations has been investigated. These specimens show severe deterioration when annealed under conditions typically used in the LPE growth of InP and InGaAsP layers. We have successfully controlled the decomposition of InP substrates in LPE growth by introducing minute amounts of phosphine gas (PH3) into the flowing hydrogen ambient. A temperature-dependent threshold concentration has been determined above which no thermal degradation is observed.
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Lum et al. (1979) studied this question.
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