Double-heterostructure Ga0.12In0.88As0.23P0.77/InP diode lasers emitting at 1.1 μm, with room-temperature pulsed thresholds as low as 2.8 kA/cm2, have been fabricated by liquid-phase epitaxy on melt-grown InP substrates.
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J. J. Hsieh (1976) studied this question.
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