Effect of ion-gun hydrogenation on the photoluminescence of degeneraten-type GaAs:Si

Hydrogenation of degenerate n-type GaAs:Si affects the gallium-vacancy energy levels, as observed from the optical emission of the gallium-vacancy--silicon-donor complex. The photoluminescence spectrum is modified by the activation of new states of charge for the vacancy, as a consequence of H trapping at the dangling bonds. The results allow a reinterpretation of earlier data published in the literature. In a parallel study, the near-band-gap emission is investigated to monitor the degree of passivation of Si impurities occurring upon hydrogenation of the material. A maximum figure of passivated donors of order 3/4 is estimated.