Carbon-ion-implanted gallium arsenide

Sheet-resistivity and Hall-effect measurements were made on C-ion-implanted GaAs after annealings at 600, 700, 800, or 900 °C. A doping efficiency of up to 50% was obtained in the 900 °C-annealed sample which is much higher than the 2–8% reported previously. The electrical profile of this sample indicated that most of the implanted C became substitutional. The electrical compensation level, on the other hand, remained relatively high (0.3–0.6) throughout the profiling range and is responsible for the low doping efficiency obtained in the C-implanted p-type GaAs.