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A model describing removal and scattering of charge carriers by defect clusters in semiconductors is proposed. Relationships allowing to establish the behaviour of carrier concentration and carrier mobility, n = f(n0, φ, T) and μ = f(μ0, φ, n0), are obtained. A satisfactory quantitative agreement of the obtained functional dependences with experimental results are shown for n-type GaAs.
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Kolchenko et al. (1978) studied this question.
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