Optical properties of oxygen-implanted and annealed GaAs layers are investigated hoping to use them for near IR waveguiding. Multi-implanted layers with flat oxygen distributions are used for optical density versus incident photon energy measurements in order to find out the predominant mechanism, absorption and/or scattering, for near-band-edge attenuation. These measurements are carried out both with layers unannealed and annealed up to 520°C. In the case of unannealed samples we find optical attenuation to follow an exponential dependence on photon energy suggesting band tail states. Similar analysis in certain annealed samples showed a quadratic dependence on photon energy suggesting a non-negligible absorption in damaged regions of small size (≈︁ 100 Å). Since in general a great fraction of optically active defects get annealed around 500°C, and also since a high-temperature stable electrical compensation due to the presence of oxygen can be obtained, 1.15 μm waveguiding in O+ implanted and high-temperature annealed GaAs seems to be possible.
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E. V. K. Rao (1976) studied this question.
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