Inductively heated synthesized graphene with record transistor mobility on oxidized silicon substrates at room temperature

We report chemical vapor-deposited (CVD) graphene field-effect transistors (GFETs) on conventional SiO2/Si substrate with high-performance comparable to GFETs on boron nitride under practical ambient conditions. The fabricated GFET statistics reveal maximum carrier mobility of ∼17 800 cm2/V-s. Intrinsic graphene features such as three-region output characteristics including soft current saturation have also been observed, in addition to over ten-fold gate modulation. Low-temperature studies indicate that impurity scattering is the limiting transport mechanism. Our results on graphene, synthesized by an inductively heated CVD system, suggest that the prospects of GFETs on oxidized silicon are comparable to those on ideal surfaces, e.g., hBN at room temperature.