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By using an antireflection-coated GaAs diode in conjunction with a diffraction grating, we show that the diode threshold current and output power are strong functions of the lasing wavelength. The diode threshold is lowest at the longer wavelengths at which it is possible to lase the diode, but the total output power in this wavelength region is limited. The data are useful in interpreting the characteristics (spectral, threshold, and power) of a normal uncoated diode laser.
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Rossi et al. (1973) studied this question.
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